| 图片 |
标 题 |
更新时间 |
 |
日立ABB IGBT模块5SNA0600G650100
ABB IGBT模块5SNA0600G650100ABB HiPakTMIGBT Module5SNA 0600G650100VCE = 6500 VIC = 600 A低损耗、坚固耐用的SPT芯片组平滑切
|
2025-06-18 |
 |
日立ABB GTO二极管5SGF 40L4502
Asymmetric Gate turn-offThyristor5SGF 40L4502VDRM=4500 VITGQM=4000 AITSM= 25103AVT0=1.2 VrT=0.65 mWVDclink=2800 V专利自
|
2025-06-18 |
 |
日立ABB GTO二极管5SGA 06D4502
Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYVDRM=4500 VITGQM=600 AITSM=3103AVT0=1.9 VrT=3.5 mWVDclink=2800 V
|
2025-06-18 |
 |
日立ABB IGBT模块5SNA0500J650300
ABB IGBT模块5SNA0500J6503005SNA 0500J650300HiPak IGBT ModuleVCE = 6500 VIC = 500 A超低损耗、坚固耐用的SPT+芯片组平滑切换
|
2025-06-18 |
 |
日立ABB GTO二极管5SGA 40L4501
Asymmetric Gate turn-off Thyristor5SGA 40L4501VDRM= 4500 VITGQM= 4000 AITSM= 25103AVT0= 2.1 VrT= 0.58 mWVDclink= 2800 V
|
2025-06-18 |
 |
日立ABB GTO二极管5SGA 30J2501
Gate turn-off Thyristor5SGA 30J2501VDRM= 2500 VITGQM= 2800 AITSM=30 kAVT0=1.5 VrT= 0.33 mVDClink= 1400 V 专利自由漂浮
|
2025-06-18 |
 |
日立ABB GTO二极管5SGA 20H2501
Gate turn-off Thyristor5SGA 20H2501VDRM= 2500 VITGQM= 2000 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技
|
2025-06-18 |
 |
日立ABB IGBT模块5SNA0400J650100
ABB IGBT模块5SNA0400J650100ABB HiPakIGBT Module5SNA 0400J650100VCE = 6500 VI = 400 A低损耗、坚固耐用的SPT芯片组平滑切换S
|
2025-06-18 |
产品分类